FDN335N FDN335N rev. c FDN335N n-channel 2.5v specified powertrench tm mosfet general description this n-channel 2.5v specified mosfet is produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. applications ? dc/dc converter ? load switch april 1999 features ? 1.7 a, 20 v. r ds(on) = 0.07 w @ v gs = 4.5 v r ds(on) = 0.100 w @ v gs = 2.5 v. ? low gate charge (3.5nc typical). ? high performance trench technology for extremely low r ds(on) . ? high power and current handling capability. ? 1999 fairchild semiconductor corporation absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 8 v i d drain current - continuous (note 1a) 1.7 a - pulsed 8 p d power dissipation for single operation (note 1a) 0.5 w (note 1b) 0.46 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r q jc thermal resistance, junction-to-case (note 1) 75 c/w package outlines and ordering information device marking device reel size tape width quantity 335 FDN335N 7 8mm 3000 units gs d g d s supersot -3 tm
FDN335N FDN335N rev. c electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 m a20 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a,referenced to 25 c14mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 m a i gssf gate-body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 m a 0.4 0.9 1.5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = 250 m a,referenced to 25 c-3mv/ c r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 1.7 a v gs = 4.5 v, i d = 1.7 a,t j = 125 c v gs = 2.5 v, i d = 1.5 a 0.055 0.079 0.078 0.070 0.120 0.100 w i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v 8 a g fs forward transconductance v ds = 5 v, i d = 1.5 a 7 s dynamic characteristics c iss input capacitance 310 pf c oss output capacitance 80 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 40 pf switching characteristics (note 2) t d(on) turn-on delay time 5 15 ns t r turn-on rise time 8.5 17 ns t d(off) turn-off delay time 11 20 ns t f turn-off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 310ns q g total gate charge 3.5 5 nc q gs gate-source charge 0.55 nc q gd gate-drain charge v ds = 10 v, i d = 1.7 a, v gs = 4.5 v, 0.95 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.42 a (note 2) 0.7 1.2 v notes: 1: r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 m s, duty cycle 2.0% a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. cu. b) 270 c/w when mounted on a minimum pad.
FDN335N FDN335N rev. c typical characteristics 0 2 4 6 8 10 01234 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 1.7a v gs = 4.5v 0 0.04 0.08 0.12 0.16 0.2 0.24 12345 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 0.85a t a = 125 o c t a = 25 o c 0 2 4 6 8 10 00.511.522.53 v ds , drain to source voltage (v) i d , drain current (a) v gs = 4.5v 3.0v 2.5v 2.0v 1.5v 3.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0246810 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 2.5v 4.0v 3.5v 4.5v 3.0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage.
FDN335N FDN335N rev. c typical characteristics (continued) figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r (t) = r(t) * r r = 270 c/w duty cycle, d = t /t 1 2 q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 0 4 8 12 16 20 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r q ja =270 o c/w t a =25 o c 0.01 0.1 1 10 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 10ms 1ms v gs = 4.5v single pulse r q ja = 270 o c/w t a = 25 o c r ds(on) limit 0 1 2 3 4 5 00.511.522.533.54 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 1.7a v ds = 5v 10v 15v 0 100 200 300 400 500 0 4 8 12 16 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation.
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